reliability qualification report stq-2016z - matte sn, rohs compliant 303 s. technology ct, broomfield co, 80021 phone: (800) smi-mmic http://www.sirenza.com document rqr-104756 rev. b products qualified by similarity the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for inaccuracies or omissions. sirenza microdevices assumes no responsibility for the use of this information, and all such inform ation shall be entirely at the user?s own risk. data subject to change. stq-1016z SRF-1016Z srq-2116z stq-3016z srf-2016z
stq-2016z reliability qualification report the stq-2016z family of products has dem onstrated reliable operation by passing all qualification testing in sirenza microdevices' produc t qualification test plan. the stq-2016z has been subject to stresses such as humidity (autoclave), extreme hot and cold environments (temperature cycling), moisture sensitivit y (msl-1 and solder reflow testing), and several others as part of t he qualification process. i. qualification overview the sirenza microdevices? stq-2016z is a di rect quadrature modulator targeted for use in a wide range of communications systems, including cellular/pcs, cdma2000, umts, and ism data com. this device features a wide 700-2 500 mhz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. ii. introduction these amplifiers are manufa ctured using a silicon german ium heterojunc tion bipolar transistor (hbt) technology. this patente d self-aligned emitte r, double poly hbt process has been in production by our fo undry since 1998. t he process has been successfully used for a wide range of rfic products including gsm pas, dect front end transceivers, lnas & vcos. this process offers comparable performance to gaas hbts with the added advantages of mature and highly reproducible silicon wafer processing. iii. fabrication technology the stq-2016z is packaged in a plasti c encapsulated tssop- 16 package that is assembled using a highly reproducible automa ted assembly process. the die is mounted using an industry standar d thermally and electrically cond uctive silver epoxy. the die is mounted directly to the exposed paddle to provide a low thermal resistance path for heat conduction out of the package. iv. package type figure 1 : image of tssop -16 exposed paddle plastic package
the sirenza microdevices qualif ication process consis ts of a series of tests designed to stress various potential failure mechanisms. this testing is performed to ensure that sirenza microdevices products are robust against potential fa ilure modes that could arise from the various die and pack age failure mechanisms stresse d. the qualification testing is based on jesd test methods common to the semi conductor industry. the manufacturing test specificatio ns are used as the pass/fail criteria for initial and final dc/rf tests. v. qualification methodology a device can be qualified by similarity to prev iously qualified produc ts provided that no new potential failure modes/mechanisms are po ssible in the new design. the following products have been qualified by similarity to stq-2016z: stq-1016z stq-3016z srf- 1016z srf-2016z srq-2116z vi. qualification by similarity sirenza microdevices defines operational life testin g as a dc biased elevated temperature test pe rformed at the ma ximum operational junction temperature limit. for the stq-2016z the maximum operati onal temperature limit is 150 o c. the purpose of the operational life test is to st atistically show that the pr oduct operated at its maximum operational ratings will be reliabl e by operating severa l hundred devices for a total time of 1000 hours. the results for this test are expressed in device hours that are calculated by multiplying the total number of devices passing the test by the number of hours tested. vii. operational life testing stq-2016z reliability qualification report
class passes fails 0 0 v <250 v 1a 250 v 500 v 1b 500 v 1000 v 1c 1000 v 2000 v 2 2000 v 4000 v sirenza microdevices classifies human body model (h bm) electrostatic discharge (esd) according to the jesd22-a114 convention. all pin pair combinations were tested. each pin pair is stressed at one static volta ge level using 1 positiv e and 1 negative pulse polarity to determine the weakest pin pair co mbination. the weakes t pin pair is tested with 3 devices below and above the failure voltage to cla ssify the part. the pass/fail status of a part is determined by the manufacturing test s pecification. the esd class quoted indicates that the devi ce passed exposure to a certai n voltage, but does not pass the next higher level. the following ta ble indicates the jesd esd sensitivity classification levels. ix. electrostatic disch arge classification x. operational life test results part number hbm esd rating stq-2016z class 1a srq-2116z class 1a 39,000 40,000 39 40 150 c 150 c 1000 hours 1000 hours july 2005 dec 2005 quantity device- hours junction temperature test duration htol completion date stq-2016z has successfully completed 168 hours of moisture soak (85 o c/85%rh) followed by three convection reflow cycl es with a peak temperature of 270 o c. the successful completion of this test classi fies the part as jesd22-a113b moisture sensitivity level 1 (msl-1). msl-1 indicates that no special dry pack requirements or time limits from openin g of static bag to reflow exist for the stq-2016z. msl-1 is highest level of moisture resistance that a devic e can be classified according to the above mentioned standard. viii. moisture sensitivity level - msl level 1 device stq-2016z reliability qualification report
pass 6 air to air, soldered on pcb -65 o c to 150 o c 10 min dwell, 1 min transition 1000 cycles jesd22-a104b temperature cycling b1a pass 10 -40c to +85c cycled bias (5? on/5?off) 1000 cycles jesd22-a109a power temperature cycle b1d pass 15 tamb=110c, 85%rh biased, 264 hours jesd22-a110b hast b1c pass 30 t amb =121c, 100%rh un-biased, 96 hours jesd22-a102c autoclave b2 pass 60 -65c to +150c 10 min dwell, 1 min transition 1000 cycles jesd22-a104b temperature cycle b3 b1b b group pass 79 t j = 150c 1000 hours jesd22-a108b high temperature operating life pass 359 msl1 reflow @ 270 o c peak jesd22-a113c preconditioning results sample size test condition/ standard test name xi. qualification test results stq-2016z reliability qualification report
pass 27 t amb =150c 1000 hours jesd22-a103b high temperature storage d pass pass 27 20 t amb =-40c 1000 hours t amb =-65c 1000 hours low temperature storage c pass 30 15 dip & look steam age condition c dip condition a, 215c jesd22-b102c dip & look steam age condition c dip condition b, 245c jesd22-b102c solderability g pass 10 t amb =60c, 90%rh 1800 hours nemi tin whisker f group results sample size test condition/ standard test name xi. qualification test results stq-2016z reliability qualification report
figure 2: infrared therma l image of stq-2016z, vd = 5.0v, id =80ma, tj = 98c one key issue in performing qualification test ing is to accurately determine the junction temperature of the de vice. sirenza microdevices us es a 3um spot size emissivity corrected infrared camera measurement to re solve the surface temper ature of the device at the maximum operational power dissipation. the results are displayed below for the stq-2016z device running at ope rational current of id= 80ma, a device voltage of 5v, and lead temperat ure of 85c. xii. junction temperature determination stq-2016z reliability qualification report
figure 3: infrared thermal image of srq- 2116z, vd = 5.0v, id =157ma, tj = 103.8c
stq-2016z reliability qualification report 0.73 fit (per 10 9 dev-hours) @ t j =55 o c, 60% cl 0.7 activation energy (ev) the following data demonstrates the results from accelerat ed life tests performed on the sirenza 4a sige hbt process. the test was performed on 791 units running at a peak junction temperature up to 195 o c. the fit rate calculation can be found below. the fit rates were generated assuming 1 failure. in r eality, there were no failures, making this a very conservative calculation. xiii. fit calculation from accelerated life test data table 3: activation energy and calculated fit for stq-2016z.
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